Abstract:
In this contribution it is reported the design, implementation and characterization of a 4-stage single-ended Ka-band power amplifier based on 100 nm GaN/Si commercial pr...Show MoreMetadata
Abstract:
In this contribution it is reported the design, implementation and characterization of a 4-stage single-ended Ka-band power amplifier based on 100 nm GaN/Si commercial process. The amplifier, designed for CW radar applications, has been measured under small-signal and pulsed large-signal conditions. The amplifier exhibits an output power above 4W, together with power added efficiency in excess of 28 % and operative gain larger than 25dB over the 34GHz-38GHz frequency range.
Date of Conference: 10-15 January 2021
Date Added to IEEE Xplore: 03 February 2021
ISBN Information:
Conference Location: Utrecht, Netherlands
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