Wavelength stability of DFB lasers for non-hermetic applications | IEEE Conference Publication | IEEE Xplore

Wavelength stability of DFB lasers for non-hermetic applications


Abstract:

As the opto-electronics telecommunication components industry moves toward higher speed, lower cost packages, with higher and higher levels of integration, the need for n...Show More

Abstract:

As the opto-electronics telecommunication components industry moves toward higher speed, lower cost packages, with higher and higher levels of integration, the need for non-hermetic distributed feedback (DFB) laser diodes has arrived. As an example, we have integrated these laser diodes into non-hermetic 2.5 Gbit/s transponder samples, which have demonstrated 20-kilometer link distances. We consider here DFB lasers for non-hermetic telecommunication applications. One of the critical issues facing non-hermetic laser diodes involves proper passivation of the laser facet region to prevent electro-chemical corrosion of the InP semiconductor material. One approach involves the use of a polymer encapsulent to protect the laser diode from electrochemical corrosion induced by moisture. However, polymer encapsulent does not inhibit moisture penetration, and may only passivate the laser diode at the junction region. Our approach involves the use of an Al/sub x/Ta/sub y/O/sub z/ facet coating that inhibits the absorption of moisture and serves as both a back (highly reflective) and front (antireflective) coating. For the non-hermetic DFB laser, we are concerned with not only moisture penetration and facet coating delamination, but also wavelength stability which is highly sensitive to changes in facet coating refractive index. We have examined the power aging and wavelength stability of non-hermetic DFB lasers with two different Al/sub x/Ta/sub y/D/sub z/ facet coatings under temperature/humidity/bias (THB) conditions. Small populations of lasers have been subjected to 85 C/85% RH conditions under low bias (/spl sim/10 mA) conditions. It is extremely important to accelerate the effects of moisture and humidity in these laser diodes to ensure that they remain robust for 15-20 years in non-hermetic environments. Low bias prevents the laser junction region from heating up with respect to the local ambient, yet still provides ample potential (/spl sim/1V) to promote any electro-ch...
Date of Conference: 29 May 2001 - 01 June 2001
Date Added to IEEE Xplore: 07 August 2002
Print ISBN:0-7803-7038-4
Print ISSN: 0569-5503
Conference Location: Orlando, FL, USA

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