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Short-circuit-current protection of SiC power MosFet including characterization by measurement | VDE Conference Publication | IEEE Xplore

Short-circuit-current protection of SiC power MosFet including characterization by measurement

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Abstract:

Short circuit measurements always introduce special challenges to the measurement setup and equipment. Especially in the area of silicon-carbide (SiC) MosFet where very l...Show More

Abstract:

Short circuit measurements always introduce special challenges to the measurement setup and equipment. Especially in the area of silicon-carbide (SiC) MosFet where very low DC-link inductances are needed the shortcircuit currents will achieve high values with very steep slopes. Not only the measurement but rather the restrainment of these currents is a challenge as well. This paper will show a measurement setup to verify the reliable detection and limitation of short circuit events at a low inductive DC busbar. The analysis of the results is based on specially designed and carefully calibrated measurement equipment including a self-made Rogowski coil. The measurement results are presented as well as the characterization, verification and calibration of this Rogowski coil.
Date of Conference: 07-08 July 2020
Date Added to IEEE Xplore: 26 August 2020
Print ISBN:978-3-8007-5245-4
Conference Location: Germany

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