A 65nm 16kb SRAM with 131.5pW Leakage at 0.9V for Wireless IoT Sensor Nodes

This paper presents a 16kb SRAM that achieves an ultra-low leakage of less than 132pW across its entire operational V_DD range (0.3-0.9V). It is implemented using a new robust two-port bitcell with 614aW leakage, which, to the best of the authors' knowledge, is the lowest leakage bitcell reported to date. Additionally, new peripheral techniques enable 1000× reduction in bit-line (BL) leakage, up to 69% improvement in access speed at low V_DD , and up to 63.6% reduction in peripheral circuitry area over state-of-the-art works. The SRAM achieves an array area efficiency of 67.87%, leakage power of 51.8pW to 131.5pW for V_DD at 0.3V and 0.9V, and >6.5 MHz access frequency.