Abstract:
Gate-All-Around (GAA) structures have shown great potential for replacing FinFETs in sub-10 nm technology node by facilitating a better gate control and improved short ch...Show MoreMetadata
Abstract:
Gate-All-Around (GAA) structures have shown great potential for replacing FinFETs in sub-10 nm technology node by facilitating a better gate control and improved short channel effects. Despite having an excellent gate control, the nanowire FETs (NWFETs) are prone to process-induced structural variability. Out of all, lithography and etching induced line edge roughness (LER) is one of the dominant sources of variability in sub 10 nm technology node GAA devices such as NWFET and nanosheet FET (NSFET). In this paper, we present a methodology to recreate an accurate NWFET surface morphology, where we generate NWFET surface profile using 2D ACF for a given LER variability parameters in MATLAB, and we incorporate the NWFET surface information in the Sentaurus Device Editor software using PERL interfacing to generate the final NWFET device structure. We generate 200 such random structures and simulate it all in a well-calibrated Sentaurus workbench deck. The proposed methodology can also be used to study the LER like variability in NSFET structures.
Date of Conference: 06-21 April 2020
Date Added to IEEE Xplore: 16 June 2020
ISBN Information:
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Line-edge Roughness ,
- Nanowire FET ,
- Autocorrelation Function ,
- Types Of Pain ,
- Technology Node ,
- Accurate Surface ,
- Degrees Of Freedom ,
- Logarithmic Scale ,
- Finite Element Method ,
- Correlation Function ,
- 3D Simulation ,
- Electrical Parameters ,
- Quantum Confinement ,
- Quantum Confinement Effect ,
- Device Physics ,
- Mobility Degradation
- Author Keywords
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Line-edge Roughness ,
- Nanowire FET ,
- Autocorrelation Function ,
- Types Of Pain ,
- Technology Node ,
- Accurate Surface ,
- Degrees Of Freedom ,
- Logarithmic Scale ,
- Finite Element Method ,
- Correlation Function ,
- 3D Simulation ,
- Electrical Parameters ,
- Quantum Confinement ,
- Quantum Confinement Effect ,
- Device Physics ,
- Mobility Degradation
- Author Keywords