A Study of BEOL Processed Hf0.5Zr0.5O2-based Ferroelectric Capacitors and Their Potential for Automotive Applications

This work presents the results of our study of Back-End-of-Line (BEOL)-processed Hf0.5Zr0.5O2 (HZO)-based Metal-Ferroelectric-Metal (MFM) capacitors fabricated at temperatures never exceeding 400 ⁰C, and over a wide range of areas (10^˗2 to 10³ µm²). These devices exhibit very tight distributions throughout the 12-in wafers that we measured, as well as neglectable size dependence. This work also presents our current understanding of the wake-up issue, and suggestion for possible ways of device engineering. In addition, the potential for automotive applications is demonstrated based on the results of a set of MFM devices systematically measured and analyzed at elevated temperatures (150-427 ⁰C).