Abstract:
A feasibility study for the continuous formation of multi-layer graphene (MLG) on both through-Si-via (TSV) top surface and all through the TSV sidewall and the bottom su...Show MoreMetadata
Abstract:
A feasibility study for the continuous formation of multi-layer graphene (MLG) on both through-Si-via (TSV) top surface and all through the TSV sidewall and the bottom surface of high-aspect-ratio TSV by thermal chemical vapor deposition (CVD) technique has been carried out. Both microstructural and μ-Raman studies on cross-sectional graphene-TSV samples confirmed that the continuous formation of MLG all along the TSV side wall for the CVD growth temperatures of 650°C and above, and it may be used as thermal TSVs for heat removal in the stacked tiers of 3D-LSI/IC.
Date of Conference: 08-10 October 2019
Date Added to IEEE Xplore: 09 April 2020
ISBN Information:
New Industry Creation Hatchery, Center (NICHe) Tohoku University, Sendai, Japan
New Industry Creation Hatchery, Center (NICHe) Tohoku University, Sendai, Japan
New Industry Creation Hatchery, Center (NICHe) Tohoku University, Sendai, Japan
Contents New Industry Creation Hatchery, Center (NICHe) Tohoku University, Sendai, Japan
New Industry Creation Hatchery, Center (NICHe) Tohoku University, Sendai, Japan
New Industry Creation Hatchery, Center (NICHe) Tohoku University, Sendai, Japan
