Abstract:
In this paper, an innovative Schottky diode architecture is proposed and implemented in 130 nm BiCMOS technology. A state-of-the-art 1 THz cut-off frequency is measured a...Show MoreMetadata
Abstract:
In this paper, an innovative Schottky diode architecture is proposed and implemented in 130 nm BiCMOS technology. A state-of-the-art 1 THz cut-off frequency is measured and an innovative way to modify the height of the Schottky barrier is proposed. This smart way could enable zero-bias high-frequency circuit designs with a very low height value of the Schottky barrier in advanced BiCMOS technology without requiring any custom implantation.
Published in: 2020 IEEE Radio and Wireless Symposium (RWS)
Date of Conference: 26-29 January 2020
Date Added to IEEE Xplore: 30 March 2020
ISBN Information:
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