Abstract:
We present a simple method that allows the fabrication of ultraviolet-selective avalanche photodiodes in a standard CMOS technology. An efficient guard ring structure is ...Show MoreMetadata
Abstract:
We present a simple method that allows the fabrication of ultraviolet-selective avalanche photodiodes in a standard CMOS technology. An efficient guard ring structure is created using the lateral diffusion of two n/sub well/ regions separated by a gap of 0.6 /spl mu/m. Our photodiodes achieve a very low dark current of only 400 pA/mm/sup 2/, an excess noise F=7 for a mean gain =20 at /spl lambda/=400 nm, and a good gain uniformity.
Published in: International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)
Date of Conference: 10-13 December 2000
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-6438-4
