Abstract:
Recently, solution processed metal oxide (MO) attracts wide interests due to the advantages including low-cost fabrication, procedure simplicity and vacuum-free technique...Show MoreMetadata
Abstract:
Recently, solution processed metal oxide (MO) attracts wide interests due to the advantages including low-cost fabrication, procedure simplicity and vacuum-free technique. Within the paper, the synthesis mechanism of metal oxide deposited through solution process is firstly briefly introduced. Then the recent advances and progress on n-type solution processed MO semiconductors as well as the solution processed MO gate dielectrics have been reviewed for thin-film transistors.
Published in: 2019 IEEE 13th International Conference on ASIC (ASICON)
Date of Conference: 29 October 2019 - 01 November 2019
Date Added to IEEE Xplore: 06 February 2020
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Department of EEE, University of Liverpool, Liverpool, UK
Department of EEE, University of Liverpool, Liverpool, UK
Department of EEE, University of Liverpool, Liverpool, UK
Contents Department of EEE, University of Liverpool, Liverpool, UK
Department of EEE, University of Liverpool, Liverpool, UK
Department of EEE, University of Liverpool, Liverpool, UK
