Abstract:
Semiconductor device temperature is challenging to measure; often IR thermography or electrical measurements are used which do not have a high enough spatial resolution f...Show MoreMetadata
Abstract:
Semiconductor device temperature is challenging to measure; often IR thermography or electrical measurements are used which do not have a high enough spatial resolution for most of the current semiconductor technology to detect sub-micron size hot spots. Thermal simulation is often therefore used to predict peak device temperature. Limitations of thermal simulations are highlighted. Latest developments in the actual measurement of semiconductor device temperature with sub-micron spatial resolution including Raman Thermography, High Spatial Resolution Hyperspectral Quantum Rod Thermal Imaging, Thermal Atomic Force Microscopy, and thermoreflectance are detailed, which enable validation of thermal simulations.
Published in: 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Date of Conference: 03-06 November 2019
Date Added to IEEE Xplore: 30 January 2020
ISBN Information: