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A Reliable Ultrafast Short-Circuit Protection Method for E-Mode GaN HEMT | IEEE Journals & Magazine | IEEE Xplore

A Reliable Ultrafast Short-Circuit Protection Method for E-Mode GaN HEMT


Abstract:

A unique three-step short-circuit protection method is proposed for the 650-V enhancement mode (E-mode) gallium nitride high-electron mobility transistor (GaN HEMT). This...Show More

Abstract:

A unique three-step short-circuit protection method is proposed for the 650-V enhancement mode (E-mode) gallium nitride high-electron mobility transistor (GaN HEMT). This method can quickly detect the short-circuit event, reduce gate voltage to enhance the device short-circuit capability, and turn off the device under fault after confirmation. Experimental results prove that with this method, the short-circuit fault detection time for E-mode GaN HEMT is shortened from 2 μs to several tens of nanoseconds, and the device can be successfully protected from fatal failure under high dc bus voltage without mistriggering.
Published in: IEEE Transactions on Power Electronics ( Volume: 35, Issue: 9, September 2020)
Page(s): 8926 - 8933
Date of Publication: 23 January 2020

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