Abstract:
In this report, a broad band (15 GHz to 34 GHz) low noise amplifier using 100 nm GaN on silicon technology is designed and fabricated. The LNA shows an extremely low nois...Show MoreMetadata
Abstract:
In this report, a broad band (15 GHz to 34 GHz) low noise amplifier using 100 nm GaN on silicon technology is designed and fabricated. The LNA shows an extremely low noise figure of 1.2 dB and small signal gain of 18.5±1.5 dB across the bandwidth. The LNA can work in the drain bias from 3.5 V to 8 V without increasing the noise figure. The chip size is 2 mm × 1.3 mm. The robustness of the LNA is also tested by stressing the working LNA with a continuous-wave input power, no significant degradation is observed.
Date of Conference: 23-26 June 2019
Date Added to IEEE Xplore: 20 January 2020
ISBN Information:
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- Index Terms
- Low-noise Amplifier ,
- Noise Figure ,
- Gallium Nitride ,
- Minimum Noise Figure ,
- Broadband ,
- Low Noise ,
- Input Power ,
- Small Signal ,
- Small Gain ,
- Chip Size ,
- Drain Bias ,
- Excellent Performance ,
- Power Consumption ,
- Current Increases ,
- Probe Test ,
- Power Amplifier ,
- Stress Experiments ,
- High Electron Mobility ,
- Matching Network ,
- Drain Current ,
- High Electron Mobility Transistors ,
- Gate Current ,
- 3rd Stage ,
- Gate Bias ,
- Low Input Power ,
- High Input Power ,
- Gate Length ,
- 1st Stage ,
- Input Matching
- Author Keywords
Contents Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- Index Terms
- Low-noise Amplifier ,
- Noise Figure ,
- Gallium Nitride ,
- Minimum Noise Figure ,
- Broadband ,
- Low Noise ,
- Input Power ,
- Small Signal ,
- Small Gain ,
- Chip Size ,
- Drain Bias ,
- Excellent Performance ,
- Power Consumption ,
- Current Increases ,
- Probe Test ,
- Power Amplifier ,
- Stress Experiments ,
- High Electron Mobility ,
- Matching Network ,
- Drain Current ,
- High Electron Mobility Transistors ,
- Gate Current ,
- 3rd Stage ,
- Gate Bias ,
- Low Input Power ,
- High Input Power ,
- Gate Length ,
- 1st Stage ,
- Input Matching
- Author Keywords
