CMOS Position-Based Charge Qubits: Theoretical Analysis of Control and Entanglement | IEEE Journals & Magazine | IEEE Xplore

CMOS Position-Based Charge Qubits: Theoretical Analysis of Control and Entanglement


(a) Schematic 3D structure containing gates (imposers), silicon channel, buried oxide (BoX) and wafer. (b) Finite element method (FEM) simulations of the electrostaticall...

Abstract:

In this study, a formal definition, robustness analysis and discussion on the control of a position-based semiconductor charge qubit are presented. Such a qubit can be re...Show More

Abstract:

In this study, a formal definition, robustness analysis and discussion on the control of a position-based semiconductor charge qubit are presented. Such a qubit can be realized in a chain of coupled quantum dots, forming a register of charge-coupled transistor-like devices, and is intended for CMOS implementation in scalable quantum computers. We discuss the construction and operation of this qubit, its Bloch sphere, and relation with maximally localized Wannier functions which define its position-based nature. We then demonstrate how to build a tight-binding model of single and multiple interacting qubits from first principles of the Schrödinger formalism. We provide all required formulae to calculate the maximally localized functions and the entries of the Hamiltonian matrix in the presence of interaction between qubits. We use three illustrative examples to demonstrate the electrostatic interaction of electrons and discuss how to build a model for many-electron (qubit) system. To conclude this study, we show that charge qubits can be entangled through electrostatic interaction.
(a) Schematic 3D structure containing gates (imposers), silicon channel, buried oxide (BoX) and wafer. (b) Finite element method (FEM) simulations of the electrostaticall...
Published in: IEEE Access ( Volume: 8)
Page(s): 4182 - 4197
Date of Publication: 19 December 2019
Electronic ISSN: 2169-3536

Funding Agency:


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