Accurate modeling of Ni/6H-SiC Schottky barrier diode (SBD) forward characteristics at high current densities

An accurate modeling and complete parameter extraction of the forward characteristics of the Ni/6H-SiC Scottky barrier diodes (SBD) for high level current densities are presented. The model takes into account the high level injection effects of the excess majority carriers and current dependence of the series resistance. Direct extraction of the large bias SBD parameters is carried out. A very good agreement between the simulated forward curves using extracted parameters and measured data up to 500 A/cm/sup 2/ is obtained.