Electromagnetic Simulation of CMOS On-Chip Spiral Inductors in 5 GHz band | IEEE Conference Publication | IEEE Xplore
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Electromagnetic Simulation of CMOS On-Chip Spiral Inductors in 5 GHz band


Abstract:

Complementary metal oxide semiconductor (CMOS) circuits became applicable to radio frequency (RF) bands in the advanced CMOS process technology. On-chip spiral inductors ...Show More

Abstract:

Complementary metal oxide semiconductor (CMOS) circuits became applicable to radio frequency (RF) bands in the advanced CMOS process technology. On-chip spiral inductors are key component to obtain high performance RF circuits. Electromagnetic simulation of the on-chip spiral inductors is very important for systematic design and improving performance. Electromagnetic simulation of a 2 nH spiral inductor in 5 GHz band is performed. Modeling of the CMOS substrate was key issue for proper simulation. The agreement between measurement and simulation was very good.
Date of Conference: 07-12 July 2019
Date Added to IEEE Xplore: 31 October 2019
ISBN Information:

ISSN Information:

Conference Location: Atlanta, GA, USA

I. Introduction

Complementary metal oxide semiconductor (CMOS) circuits became applicable to radio frequency (RF) bands in the advanced CMOS process technology. On-chip spiral inductors are key component to obtain high performance RF circuits. Higher Q value enables lower phase noise. The authors have tried to realize higher Q values of spiral inductors by using post processing of ion irradiation [1][2][3]. Electromagnetic simulation of the on-chip spiral inductors is very important for systematic design and improving performance. In this paper, electromagnetic simulation of a 2 nH spiral inductor in 5 GHz band is performed. Modeling of the CMOS substrate was key issue for proper simulation.

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