Electromagnetic Simulation of CMOS On-Chip Spiral Inductors in 5 GHz band

Complementary metal oxide semiconductor (CMOS) circuits became applicable to radio frequency (RF) bands in the advanced CMOS process technology. On-chip spiral inductors are key component to obtain high performance RF circuits. Electromagnetic simulation of the on-chip spiral inductors is very important for systematic design and improving performance. Electromagnetic simulation of a 2 nH spiral inductor in 5 GHz band is performed. Modeling of the CMOS substrate was key issue for proper simulation. The agreement between measurement and simulation was very good.

I. Introduction

Complementary metal oxide semiconductor (CMOS) circuits became applicable to radio frequency (RF) bands in the advanced CMOS process technology. On-chip spiral inductors are key component to obtain high performance RF circuits. Higher Q value enables lower phase noise. The authors have tried to realize higher Q values of spiral inductors by using post processing of ion irradiation [1][2][3]. Electromagnetic simulation of the on-chip spiral inductors is very important for systematic design and improving performance. In this paper, electromagnetic simulation of a 2 nH spiral inductor in 5 GHz band is performed. Modeling of the CMOS substrate was key issue for proper simulation.