Relationship between capacitance and conductance in MOS capacitors

In this work, we describe how the frequency dependence of conductance (G) and capacitance (C) of a generic MOS capacitor results in peaks of the functions G/ω and - ωdC/dω. By means of TCAD simulations, we show that G/ω and -ωdC/dω peak at the same value and at the same frequency for every bias point from accumulation to inversion. We illustrate how the properties of the peaks change with the semiconductor doping (N_D), oxide capacitance (C_OX), minority carrier lifetime (τ_g), interface defect parameters (N_IT, σ) and majority carrier dielectric relaxation time (τ_r). Finally, we demonstrate how these insights on G/ω and -ωdC/dω can be used to extract CO_X, N_D and τ_g from InGaAs MOSCAP measurements.