Abstract:
A single-chip CMOS transceiver (TRX) capable of wireless data rates up to 80 Gb/s using part of frequencies (252–279 GHz) covered by IEEE Std 802.15.3d is presented. The ...Show MoreMetadata
Abstract:
A single-chip CMOS transceiver (TRX) capable of wireless data rates up to 80 Gb/s using part of frequencies (252–279 GHz) covered by IEEE Std 802.15.3d is presented. The TRX chip operates in either transmitter (TX) or receiver (RX) mode at frequencies comparable to {f_{\mathrm {max}}} of the NMOSFET. The TX part adopts mixer-last architecture with four-way power combining using a ring circuit called a double-rat-race. The RX part adopts fundamental-mixer-first direct-conversion architecture. In the RX mode, the TX serves as an LO multiplier chain, which conventionally accounted for a significant part of the RX die area. The double-rat-race, having an improved design than the original one, integrates the TX and RX and also rejects unwanted harmonics generated by the frequency-doubler-based upconversion mixer. Low-loss, low-characteristic-impedance transmission lines are used extensively to combat losses. The TRX was fabricated using a 40-nm CMOS process. The saturated output power of the TX is −1.6 dBm at 265.68 GHz. The mean single-sideband noise figure (SSB NF) of the RX is 22.9 dB. The TX mode and the RX mode consume dc power of 890 and 897 mW, respectively. A wireless data rate of 80 Gb/s between a pair of TRX chips is demonstrated with 16QAM over a distance of 3 cm.
Published in: IEEE Journal of Solid-State Circuits ( Volume: 54, Issue: 12, December 2019)
Referenced in:IEEE RFIC Virtual Journal
Funding Agency:
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Japan
Sangyeop Lee (S’09–M’13) received the B.E. degree in electrical and electronic engineering from the Tokyo Institute of Technology, Tokyo, Japan, in 2009, and the M.E. and Ph.D. degrees in electronics and applied physics from the Tokyo Institute of Technology, Yokohama, Japan, in 2010 and 2013, respectively.
After working for a Korean Research Institute, Agency for Defense Development (ADD), Daejeon, South Korea, he joined ...Show More
Sangyeop Lee (S’09–M’13) received the B.E. degree in electrical and electronic engineering from the Tokyo Institute of Technology, Tokyo, Japan, in 2009, and the M.E. and Ph.D. degrees in electronics and applied physics from the Tokyo Institute of Technology, Yokohama, Japan, in 2010 and 2013, respectively.
After working for a Korean Research Institute, Agency for Defense Development (ADD), Daejeon, South Korea, he joined ...View more
National Institute of Information and Communications Technology, Koganei, Japan
Shinsuke Hara (M’13) received the B.E., M.E., and Ph.D. degrees in physics from the Tokyo University of Science, Tokyo, Japan, in 2000, 2002, and 2005, respectively.
In 2013, he joined the National Institute of Information and Communication Technology (NICT), Koganei, Japan, as a Researcher. His research interests are millimeter-wave CMOS circuits design and nanoscale semiconductor devices.
Shinsuke Hara (M’13) received the B.E., M.E., and Ph.D. degrees in physics from the Tokyo University of Science, Tokyo, Japan, in 2000, 2002, and 2005, respectively.
In 2013, he joined the National Institute of Information and Communication Technology (NICT), Koganei, Japan, as a Researcher. His research interests are millimeter-wave CMOS circuits design and nanoscale semiconductor devices.View more
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Japan
Takeshi Yoshida (M’98) received the B.E., M.E., and D.E. degrees in electronics engineering from Hiroshima University, Higashihiroshima, Japan, in 1994, 1996, and 2004, respectively.
From 1996 to 2001, he was with System Electronics Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Japan. He is currently an Associate Professor with the Graduate School of Advanced Sciences of Matter, Hiroshima University.
Dr....Show More
Takeshi Yoshida (M’98) received the B.E., M.E., and D.E. degrees in electronics engineering from Hiroshima University, Higashihiroshima, Japan, in 1994, 1996, and 2004, respectively.
From 1996 to 2001, he was with System Electronics Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Japan. He is currently an Associate Professor with the Graduate School of Advanced Sciences of Matter, Hiroshima University.
Dr....View more
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Japan
Shuhei Amakawa (S’98–M’02) received the B.Eng., M.Eng., and Ph.D. degrees in engineering from The University of Tokyo, Tokyo, Japan, in 1995, 1997, and 2001, respectively, and the M.Phil. degree in physics from the University of Cambridge, Cambridge, U.K., in 2000.
He was a Research Fellow with the Cavendish Laboratory, University of Cambridge from 2001 to 2004. After working for a couple of electronic design automation (E...Show More
Shuhei Amakawa (S’98–M’02) received the B.Eng., M.Eng., and Ph.D. degrees in engineering from The University of Tokyo, Tokyo, Japan, in 1995, 1997, and 2001, respectively, and the M.Phil. degree in physics from the University of Cambridge, Cambridge, U.K., in 2000.
He was a Research Fellow with the Cavendish Laboratory, University of Cambridge from 2001 to 2004. After working for a couple of electronic design automation (E...View more
National Institute of Information and Communications Technology, Koganei, Japan
Ruibing Dong received the B.E. degree from Hunan University, Changsha, China, in 2004, the M.E. degree from the South China University of Technology, Guangzhou, China, in 2008, and the Ph.D. degree from Kyushu University, Fukuoka, Japan, in 2011.
In 2015, he joined the National Institute of Information and Communication Technology (NICT), Koganei, Japan, as a Researcher. His research interests are millimeter-wave and low-p...Show More
Ruibing Dong received the B.E. degree from Hunan University, Changsha, China, in 2004, the M.E. degree from the South China University of Technology, Guangzhou, China, in 2008, and the Ph.D. degree from Kyushu University, Fukuoka, Japan, in 2011.
In 2015, he joined the National Institute of Information and Communication Technology (NICT), Koganei, Japan, as a Researcher. His research interests are millimeter-wave and low-p...View more
National Institute of Information and Communications Technology, Koganei, Japan
Akifumi Kasamatsu received the B.E., M.E., and Ph.D. degrees in electronics engineering from Sophia University, Tokyo, Japan, in 1991, 1993, and 1997, respectively.
From 1997 to 1999, he was a Research Assistant with Sophia University. From 1999 to 2002, he was with Fujitsu Laboratories Ltd., Atsugi, Japan. In 2002, he joined the National Institute of Information and Communications Technology (NICT), Koganei, Japan, where ...Show More
Akifumi Kasamatsu received the B.E., M.E., and Ph.D. degrees in electronics engineering from Sophia University, Tokyo, Japan, in 1991, 1993, and 1997, respectively.
From 1997 to 1999, he was a Research Assistant with Sophia University. From 1999 to 2002, he was with Fujitsu Laboratories Ltd., Atsugi, Japan. In 2002, he joined the National Institute of Information and Communications Technology (NICT), Koganei, Japan, where ...View more
Panasonic Corporation, Yokohama, Japan
Junji Sato received the B.S. and M.S. degrees in electrical and electronic engineering from the Tokyo Institute of Technology, Tokyo, Japan, in 1997 and 1999, respectively.
In 1999, he joined Panasonic Corporation, Yokohama, Japan, where he has been engaged in research and development of active antenna on microwave and millimeter wave. Since 2007, he has been designing millimeter-wave CMOS integrated circuits and devices f...Show More
Junji Sato received the B.S. and M.S. degrees in electrical and electronic engineering from the Tokyo Institute of Technology, Tokyo, Japan, in 1997 and 1999, respectively.
In 1999, he joined Panasonic Corporation, Yokohama, Japan, where he has been engaged in research and development of active antenna on microwave and millimeter wave. Since 2007, he has been designing millimeter-wave CMOS integrated circuits and devices f...View more
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Japan
Minoru Fujishima (S’89–M’93–SM’16) received the B.E., M.E., and Ph.D. degrees in electronics engineering from The University of Tokyo, Tokyo, Japan, in 1988, 1990, and 1993, respectively.
He joined the Faculty of The University of Tokyo in 1988 as a Research Associate, where he has been an Associate Professor with the School of Frontier Sciences since 1999. He was a Visiting Professor with the ESAT-MICAS Laboratory, Kathol...Show More
Minoru Fujishima (S’89–M’93–SM’16) received the B.E., M.E., and Ph.D. degrees in electronics engineering from The University of Tokyo, Tokyo, Japan, in 1988, 1990, and 1993, respectively.
He joined the Faculty of The University of Tokyo in 1988 as a Research Associate, where he has been an Associate Professor with the School of Frontier Sciences since 1999. He was a Visiting Professor with the ESAT-MICAS Laboratory, Kathol...View more
Contents Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Japan
Sangyeop Lee (S’09–M’13) received the B.E. degree in electrical and electronic engineering from the Tokyo Institute of Technology, Tokyo, Japan, in 2009, and the M.E. and Ph.D. degrees in electronics and applied physics from the Tokyo Institute of Technology, Yokohama, Japan, in 2010 and 2013, respectively.
After working for a Korean Research Institute, Agency for Defense Development (ADD), Daejeon, South Korea, he joined Hiroshima University, Higashihiroshima, Japan, as a Researcher, in 2017, where he is currently an Assistant Professor. His current research interests include the design of millimeter-wave and terahertz CMOS circuits.
Sangyeop Lee (S’09–M’13) received the B.E. degree in electrical and electronic engineering from the Tokyo Institute of Technology, Tokyo, Japan, in 2009, and the M.E. and Ph.D. degrees in electronics and applied physics from the Tokyo Institute of Technology, Yokohama, Japan, in 2010 and 2013, respectively.
After working for a Korean Research Institute, Agency for Defense Development (ADD), Daejeon, South Korea, he joined Hiroshima University, Higashihiroshima, Japan, as a Researcher, in 2017, where he is currently an Assistant Professor. His current research interests include the design of millimeter-wave and terahertz CMOS circuits.View more
National Institute of Information and Communications Technology, Koganei, Japan
Shinsuke Hara (M’13) received the B.E., M.E., and Ph.D. degrees in physics from the Tokyo University of Science, Tokyo, Japan, in 2000, 2002, and 2005, respectively.
In 2013, he joined the National Institute of Information and Communication Technology (NICT), Koganei, Japan, as a Researcher. His research interests are millimeter-wave CMOS circuits design and nanoscale semiconductor devices.
Shinsuke Hara (M’13) received the B.E., M.E., and Ph.D. degrees in physics from the Tokyo University of Science, Tokyo, Japan, in 2000, 2002, and 2005, respectively.
In 2013, he joined the National Institute of Information and Communication Technology (NICT), Koganei, Japan, as a Researcher. His research interests are millimeter-wave CMOS circuits design and nanoscale semiconductor devices.View more
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Japan
Takeshi Yoshida (M’98) received the B.E., M.E., and D.E. degrees in electronics engineering from Hiroshima University, Higashihiroshima, Japan, in 1994, 1996, and 2004, respectively.
From 1996 to 2001, he was with System Electronics Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Japan. He is currently an Associate Professor with the Graduate School of Advanced Sciences of Matter, Hiroshima University.
Dr. Yoshida is also a member of the Institute of Electronics, Information and Communication Engineers.
Takeshi Yoshida (M’98) received the B.E., M.E., and D.E. degrees in electronics engineering from Hiroshima University, Higashihiroshima, Japan, in 1994, 1996, and 2004, respectively.
From 1996 to 2001, he was with System Electronics Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Japan. He is currently an Associate Professor with the Graduate School of Advanced Sciences of Matter, Hiroshima University.
Dr. Yoshida is also a member of the Institute of Electronics, Information and Communication Engineers.View more
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Japan
Shuhei Amakawa (S’98–M’02) received the B.Eng., M.Eng., and Ph.D. degrees in engineering from The University of Tokyo, Tokyo, Japan, in 1995, 1997, and 2001, respectively, and the M.Phil. degree in physics from the University of Cambridge, Cambridge, U.K., in 2000.
He was a Research Fellow with the Cavendish Laboratory, University of Cambridge from 2001 to 2004. After working for a couple of electronic design automation (EDA) companies, he joined the Integrated Research Institute, Tokyo Institute of Technology, Tokyo, in 2006. Since 2010, he has been with the Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Japan, where he is currently an Associate Professor. His research interests include modeling and simulation of nanoelectronic devices and systems, design of RF circuits and interconnects, and microwave theory and measurement.
Dr. Amakawa has been serving as an Associate Editor for Electronics Letters since 2015.
Shuhei Amakawa (S’98–M’02) received the B.Eng., M.Eng., and Ph.D. degrees in engineering from The University of Tokyo, Tokyo, Japan, in 1995, 1997, and 2001, respectively, and the M.Phil. degree in physics from the University of Cambridge, Cambridge, U.K., in 2000.
He was a Research Fellow with the Cavendish Laboratory, University of Cambridge from 2001 to 2004. After working for a couple of electronic design automation (EDA) companies, he joined the Integrated Research Institute, Tokyo Institute of Technology, Tokyo, in 2006. Since 2010, he has been with the Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Japan, where he is currently an Associate Professor. His research interests include modeling and simulation of nanoelectronic devices and systems, design of RF circuits and interconnects, and microwave theory and measurement.
Dr. Amakawa has been serving as an Associate Editor for Electronics Letters since 2015.View more
National Institute of Information and Communications Technology, Koganei, Japan
Ruibing Dong received the B.E. degree from Hunan University, Changsha, China, in 2004, the M.E. degree from the South China University of Technology, Guangzhou, China, in 2008, and the Ph.D. degree from Kyushu University, Fukuoka, Japan, in 2011.
In 2015, he joined the National Institute of Information and Communication Technology (NICT), Koganei, Japan, as a Researcher. His research interests are millimeter-wave and low-power CMOS circuits.
Ruibing Dong received the B.E. degree from Hunan University, Changsha, China, in 2004, the M.E. degree from the South China University of Technology, Guangzhou, China, in 2008, and the Ph.D. degree from Kyushu University, Fukuoka, Japan, in 2011.
In 2015, he joined the National Institute of Information and Communication Technology (NICT), Koganei, Japan, as a Researcher. His research interests are millimeter-wave and low-power CMOS circuits.View more
National Institute of Information and Communications Technology, Koganei, Japan
Akifumi Kasamatsu received the B.E., M.E., and Ph.D. degrees in electronics engineering from Sophia University, Tokyo, Japan, in 1991, 1993, and 1997, respectively.
From 1997 to 1999, he was a Research Assistant with Sophia University. From 1999 to 2002, he was with Fujitsu Laboratories Ltd., Atsugi, Japan. In 2002, he joined the National Institute of Information and Communications Technology (NICT), Koganei, Japan, where he is currently an Executive Researcher and a Principal Investigator of the Terahertz Wave Electronics Project. His current research interests are in wireless communication technology, such as wireless transceivers and nanoscale semiconductor devices for millimeter- and terahertz-wave communications.
Akifumi Kasamatsu received the B.E., M.E., and Ph.D. degrees in electronics engineering from Sophia University, Tokyo, Japan, in 1991, 1993, and 1997, respectively.
From 1997 to 1999, he was a Research Assistant with Sophia University. From 1999 to 2002, he was with Fujitsu Laboratories Ltd., Atsugi, Japan. In 2002, he joined the National Institute of Information and Communications Technology (NICT), Koganei, Japan, where he is currently an Executive Researcher and a Principal Investigator of the Terahertz Wave Electronics Project. His current research interests are in wireless communication technology, such as wireless transceivers and nanoscale semiconductor devices for millimeter- and terahertz-wave communications.View more
Panasonic Corporation, Yokohama, Japan
Junji Sato received the B.S. and M.S. degrees in electrical and electronic engineering from the Tokyo Institute of Technology, Tokyo, Japan, in 1997 and 1999, respectively.
In 1999, he joined Panasonic Corporation, Yokohama, Japan, where he has been engaged in research and development of active antenna on microwave and millimeter wave. Since 2007, he has been designing millimeter-wave CMOS integrated circuits and devices for wireless communication applications.
Junji Sato received the B.S. and M.S. degrees in electrical and electronic engineering from the Tokyo Institute of Technology, Tokyo, Japan, in 1997 and 1999, respectively.
In 1999, he joined Panasonic Corporation, Yokohama, Japan, where he has been engaged in research and development of active antenna on microwave and millimeter wave. Since 2007, he has been designing millimeter-wave CMOS integrated circuits and devices for wireless communication applications.View more
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Japan
Minoru Fujishima (S’89–M’93–SM’16) received the B.E., M.E., and Ph.D. degrees in electronics engineering from The University of Tokyo, Tokyo, Japan, in 1988, 1990, and 1993, respectively.
He joined the Faculty of The University of Tokyo in 1988 as a Research Associate, where he has been an Associate Professor with the School of Frontier Sciences since 1999. He was a Visiting Professor with the ESAT-MICAS Laboratory, Katholieke Universiteit Leuven, Leuven, Belgium, from 1998 to 2000. Since 2009, he has been a Professor with the Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Japan. He studied design and modeling of CMOS and BiCMOS circuits, nonlinear circuits, single-electron circuits, and quantum-computing circuits. He has coauthored more than 40 journal articles, 100 conference papers, and a book entitled Design and Modeling of Millimeter-Wave CMOS Circuits for Wireless Transceivers: Era of Sub-100nm Technology (Springer, 2008). His current research interests are in the designs of low-power millimeter- and short-millimeter-wave wireless CMOS circuits.
Dr. Fujishima has been serving as a technical committee member of several international conferences. He is also a member of IEICE and JSAP. He was a Distinguished Lecturer of SSCS from 2011 to 2012. He was the Chair of the IEEE SSCS Kansai Chapter from 2013 to 2014.
Minoru Fujishima (S’89–M’93–SM’16) received the B.E., M.E., and Ph.D. degrees in electronics engineering from The University of Tokyo, Tokyo, Japan, in 1988, 1990, and 1993, respectively.
He joined the Faculty of The University of Tokyo in 1988 as a Research Associate, where he has been an Associate Professor with the School of Frontier Sciences since 1999. He was a Visiting Professor with the ESAT-MICAS Laboratory, Katholieke Universiteit Leuven, Leuven, Belgium, from 1998 to 2000. Since 2009, he has been a Professor with the Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Japan. He studied design and modeling of CMOS and BiCMOS circuits, nonlinear circuits, single-electron circuits, and quantum-computing circuits. He has coauthored more than 40 journal articles, 100 conference papers, and a book entitled Design and Modeling of Millimeter-Wave CMOS Circuits for Wireless Transceivers: Era of Sub-100nm Technology (Springer, 2008). His current research interests are in the designs of low-power millimeter- and short-millimeter-wave wireless CMOS circuits.
Dr. Fujishima has been serving as a technical committee member of several international conferences. He is also a member of IEICE and JSAP. He was a Distinguished Lecturer of SSCS from 2011 to 2012. He was the Chair of the IEEE SSCS Kansai Chapter from 2013 to 2014.View more
