Photo Dissociation Properties of Pure and Ga Doped ZnO Nano Phases

ZnO oxide is a promising material for optoelectronics because of its wide and direct gap (E_g = 3.37 eV at room temperature). Pure and doped zinc oxide powders of various grain sizes have been synthesized by vaporisation-condensation using a solar furnace. The initial powders contained from 0 to 5 Ga mol % and 1mol ZnO+2mol Ga .This dissertation is the study of the effect of ZnO doped with Ga nano phase.The Research done initially on pure Zinc oxide doped with Ga micro phase using a simple electric oven and nano phase by the Odeillo solar furnace. The problem of this study is mainly at the phase after the doping created called "Gallate phase" ZnGa₂O₄, where we notice the disappearance of this nano phase which proves the high temperature effect . Results show: The appearance of the spinel phase ZnGa₂O₄(Gallate), in the micro powders. The grain size of nanopowders increases as the Ga concentration increases for all considered compositions.