Solution Processed ZnSnO Thin-film Transistors with Peroxide- Aluminum Oxide Dielectric

In this work, we investigate an fabricating route of solution-processed thin-film transistors (TFTs). The high-k dielectric layers of aluminum oxide (AlO) were optimized through hydrogen peroxide (H₂O₂). With Zn incorporation in tin oxide (SnO) semiconductor layer, the ZnSnO TFT with a field effect mobility of 4.3 cm²·V^-1·s^-1, a threshold voltage of 2 V, a subthreshold swing of 0.16 V/dec and an on/off ratio of 10⁶.

I. Introduction

With the strong potential for applications in low-cost large-area active-matrix displays, oxide semiconductor thin film transistors (TFTs) have been researched extensively. In ₂ O ₃ , ZnO and SnO ₂ based semiconductors are promising candidates for information displays [1] . However, In is a rare element (0.25 ppm) in the earth’s upper continental crust, prompting researchers to exploit In-free materials [1] . Moreover, for ZnO TFT, although the semiconductor behavior has been proved, the weak Zn–O bonds in their lattice lead to a weak reliability of TFTs devices [1] . Therefore, for the consideration of the low-cost fabrication and the strong M-O bonds, SnO based semiconductor has been recognized as promising materials for channel layer.