Abstract:
GaN RF device is considered as an excellent choice for 5G application. In this paper, the key design and processing technologies of GaN HEMT are introduced to enhance the...Show MoreMetadata
Abstract:
GaN RF device is considered as an excellent choice for 5G application. In this paper, the key design and processing technologies of GaN HEMT are introduced to enhance the DC and RF performance. In addition, the thermal consideration and reliability of GaN Devices are discussed. Lastly, the technologies towards miniaturization of PA modules are discussed for successful deployment in 5G base stations.
Date of Conference: 17-19 June 2019
Date Added to IEEE Xplore: 08 August 2019
ISBN Information:
Print on Demand(PoD) ISSN: 2381-3555
Contents 