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Topographical dependence of charging and new phenomenon during inductively coupled plasma (ICP) CVD process | IEEE Conference Publication | IEEE Xplore

Topographical dependence of charging and new phenomenon during inductively coupled plasma (ICP) CVD process


Abstract:

This paper presents the influence of topographical parameters such as antenna area, perimeter and aspect ratio, on charging during an ICP oxide deposition process. We sho...Show More

Abstract:

This paper presents the influence of topographical parameters such as antenna area, perimeter and aspect ratio, on charging during an ICP oxide deposition process. We show that an extended electron-shading occurs during the beginning of the deposition. Moreover, we present a new phenomenon of drastic damaging when thin oxide layers are deposited. We attribute this to an electron current transient at the wafer dechuck in the ICP chamber.
Date of Conference: 22-24 May 2000
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-9651577-4-1
Conference Location: Santa Clara, CA, USA

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