Abstract:
This work reports a high-power modulator implemented in 45-nm CMOS SOI for signal processing after the power amplifier. Two stacked switch variations, a 12 stack and 8 st...Show MoreMetadata
Abstract:
This work reports a high-power modulator implemented in 45-nm CMOS SOI for signal processing after the power amplifier. Two stacked switch variations, a 12 stack and 8 stack, were designed in 45-nm SOI CMOS and tested for trade-offs in insertion loss and power handling. These switches use a novel tapering technique to significantly improve switch linearity. The modulators have P1dB values between 34 dBm and 39 dBm while demonstrating a modulation bandwidth of nearly 500 MHz with a 1 GHz carrier. The IIP3 is between 46 dBm and 61 dBm.
Published in: 2019 IEEE MTT-S International Microwave Symposium (IMS)
Date of Conference: 02-07 June 2019
Date Added to IEEE Xplore: 25 July 2019
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