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A 300mm CMOS-Compatible PECVD Silicon Nitride Platform for Integrated Photonics with Low Loss and Low Process Induced Phase Variation | IEEE Conference Publication | IEEE Xplore

A 300mm CMOS-Compatible PECVD Silicon Nitride Platform for Integrated Photonics with Low Loss and Low Process Induced Phase Variation


Abstract:

Low loss PECVD silicon nitride waveguides at 905 nm (0.2 dB/cm) and 532 nm (1.36 dB/cm) wavelengths are reported. Efficacy of phase variation measurements for identifying...Show More

Abstract:

Low loss PECVD silicon nitride waveguides at 905 nm (0.2 dB/cm) and 532 nm (1.36 dB/cm) wavelengths are reported. Efficacy of phase variation measurements for identifying process conditions for optical phased array fabrication is demonstrated.
Date of Conference: 03-07 March 2019
Date Added to IEEE Xplore: 25 April 2019
ISBN Information:
Conference Location: San Diego, CA, USA

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