Fabrication and Characterization of Surface Electrode Ion Trap for Quantum Computing

Ion trap is a promising approach to realizing scalable quantum computer as it presents high coherence time. Silicon, due to its manufacturability, is being considered as a potential substrate to fabricate complex ion-trap designs towards trap miniaturization and on-chip integration of electronics and optics. However, Si ion traps need proper structural design to reduce the substrate RF loss. In this paper, high-resistivity Si substrate materials has been utilized to fabricate surface electrode ion trap. Its DC and RF properties has been investigated and compared to the ion trap fabricated on sapphire substrate, which is one of the most established substrate material for trap fabrication.