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Study on bottom-up Cu filling process for Through Silicon Via (TSV) metallization | IEEE Conference Publication | IEEE Xplore

Study on bottom-up Cu filling process for Through Silicon Via (TSV) metallization


Abstract:

In this study, stepwise current was used for TSV Cu electroplating. TSV with void defect and solid filled TSV showed different voltage behavior at low current density. Ba...Show More

Abstract:

In this study, stepwise current was used for TSV Cu electroplating. TSV with void defect and solid filled TSV showed different voltage behavior at low current density. Based on voltage behavior of stepwise current electroplating and linear current sweep, TSV Cu electroplating process was optimized and stable solid TSV filling was achieved without any defect.
Date of Conference: 04-07 December 2018
Date Added to IEEE Xplore: 28 February 2019
ISBN Information:
Conference Location: Singapore

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