Abstract:
The aim of this study is to investigate the behavior of the thermal expansion coefficient (CTE) of silicon at different crystallographic orientations through studies of t...Show MoreMetadata
Abstract:
The aim of this study is to investigate the behavior of the thermal expansion coefficient (CTE) of silicon at different crystallographic orientations through studies of the quality factor, Q, over a wide range of temperatures. We investigate how the observed effects of CTE may deviate from the expected isotropic behavior due to irregularities of fabrication, or because of the influence of doping or other effects.
Date of Conference: 21-24 May 2018
Date Added to IEEE Xplore: 03 January 2019
ISBN Information: