Abstract:
In this paper, we studied on the nanometer tungsten (W) thin films deposited onto Si3N4/SiO2/Si substrates by DC magnetron sputtering. The morphologies, crystal structure...Show MoreMetadata
Abstract:
In this paper, we studied on the nanometer tungsten (W) thin films deposited onto Si3N4/SiO2/Si substrates by DC magnetron sputtering. The morphologies, crystal structures and components of W thin films with different thicknesses were investigated. The four-terminal electrodes structure was prepared by microfabrication technology and the electrical and superconducting properties of W thin films were measured. All results show that the W thin films are mainly composed of β-W under our experimental growth conditions. The superconducting transition temperature (Tc) of the W thin film with different thickness fluctuates from 1.15K to 1.65K.
Published in: 2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)
Date of Conference: 24-26 November 2018
Date Added to IEEE Xplore: 30 December 2018
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