Partial discharge characteristics at ultra-short voltage risetimes

This paper describes continuation of author's works on the impact of PWM waveforms characterized by ultra-short rise times on PD characteristics in high voltage insulation systems. The implications of this kind of voltage exposure is becoming increasingly important as with rapid development of silicon carbide (SiC) and gallium nitride (GaN) based power electronic components the rise times used in machine control circuits keep getting shorter and the carrier frequencies higher. There is an imminent need to further develop diagnostic methods for PD detection at such extreme conditions. A PD measurement circuit based on capacitive decoupling and suitable for ultra-short rise times is presented here. Functionality of the circuit is demonstrated for a twisted pair test object insulated by enamel containing chromium oxide (Cr2O3) filler for rise times between 15 and 800 ns. The impact of voltage steepness on the PD extinction voltages (PDEV) and on other measurable parameters is reported. Specifically, the total number of PDs and their amplitude per modulated cycle are shown. The PD magnitude keeps increasing with the gradually decreased rise time, while the PDEV decreases. However, when compensating for voltage overshoot, less difference is noted. It is also demonstrated that the used PD detector allow for measurements at carrier frequencies well exceeding 1 kHz and rise times well below 100 ns as well as how the PD characteristics changes due to voltage overshoots inflicted by reflections.