Contents I. Introduction
Graphene has unique geometry, superior electrical, optical, and mechanical properties [1], [2]. Recently, the construction of mixed-dimensional heterojunctions based on two-dimensional (2D) graphene and another non-2D (-D, , or 3) semiconductors has attracted strong attention for improving performance or creating novel functionalities [3]–[6]. Schottky junctions are a kind of basic and important semiconductor devices. Mixed-dimensional Schottky junctions based on graphene and semiconductor nanowires/nanobelts (NWs/NBs) have been intensively investigated. Current studies mainly focus on the electrical and optoelectrical characteristics, such as rectification ratio, responsivity, speed, detection limits, or power conversion efficiency etc. [7]–[12]. Luo et al. [10] have fabricated solar cells based on graphene/GaAs NW Schottky junction with remarkable power conversion efficiency of 8.8%. Miao et al. [11] have constructed graphene/InAs NW heterojunctions and explored their application in near-infrared photodetection. Ye et al. [12] have reported graphene/semiconductor (ZnO, CdS, and CdSe) NW heterojunction LEDs. Despite these breakthroughs on diverse application fields, as far as we know, few works have studied the influence of Schottky barrier height (SBH) inhomogeneity on the electrical transport characteristics in graphene/semiconductor NW/NB Schottky junctions.
