Abstract:
A modification of stacked spiral inductors increases the self-resonance frequency by 100% with no additional processing steps, yielding values of 5 nH to 266 nH and self-...Show MoreMetadata
Abstract:
A modification of stacked spiral inductors increases the self-resonance frequency by 100% with no additional processing steps, yielding values of 5 nH to 266 nH and self-resonance frequencies of 11.2 GHz to 0.5 GHz. Closed-form expressions predicting the self-resonance frequency with less than 5% error have also been developed. A 1-to-2 transformer consisting of 3 stacked spirals achieves a voltage gain of 1.8 at 2.5 GHz. The structures have been fabricated in standard CMOS technologies with four and five metal layers.
Published in: Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)
Date of Conference: 24-24 May 2000
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-5809-0