Stacked inductors and 1-to-2 transformers in CMOS technology | IEEE Conference Publication | IEEE Xplore

Stacked inductors and 1-to-2 transformers in CMOS technology


Abstract:

A modification of stacked spiral inductors increases the self-resonance frequency by 100% with no additional processing steps, yielding values of 5 nH to 266 nH and self-...Show More

Abstract:

A modification of stacked spiral inductors increases the self-resonance frequency by 100% with no additional processing steps, yielding values of 5 nH to 266 nH and self-resonance frequencies of 11.2 GHz to 0.5 GHz. Closed-form expressions predicting the self-resonance frequency with less than 5% error have also been developed. A 1-to-2 transformer consisting of 3 stacked spirals achieves a voltage gain of 1.8 at 2.5 GHz. The structures have been fabricated in standard CMOS technologies with four and five metal layers.
Date of Conference: 24-24 May 2000
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-5809-0
Conference Location: Orlando, FL, USA

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