Impact Statement:We have several novel breakthroughs comparing with the previously reported blue HEMT-LEDs owning the lateral device layout: 1. Controllable green light emission. Due to t...Show More
Abstract:
This paper reports a monolithic integration of GaN high-electron-mobility transistor (HEMT) and green light-emitting diode (LED), where the circular HEMT is surrounded by...Show MoreMetadata
Impact Statement:
We have several novel breakthroughs comparing with the previously reported blue HEMT-LEDs owning the lateral device layout: 1. Controllable green light emission. Due to the "green gap" and difficulty of monolithic integration, we are the first report on the green HEMT-LED. 2. A novel circular device layout adopted to improve the reported lateral layout, so that the device can spread current much better for overgrown LED and finally get a uniform light emission for the first time.
Abstract:
This paper reports a monolithic integration of GaN high-electron-mobility transistor (HEMT) and green light-emitting diode (LED), where the circular HEMT is surrounded by a ring-shaped LED and two devices are seamlessly interconnected by the LED's n-GaN layer and the HEMT's two-dimensional electron gas (2DEG) channel. By adopting such a novel circular layout design, the green HEMT-LED shows a controllable and uniform green light emission at 507 nm by simply tuning its gate voltage. This enables a uniform, controllable green LED light source, serving as an essential element in the red–green–blue (RGB) LED solution for a wide range of applications, such as tunable-spectrum white LED illumination, multichannel visible light communication with wavelength division multiplexing, RGB-based full-color LED displays, and optogenetics.
Published in: IEEE Photonics Journal ( Volume: 10, Issue: 5, October 2018)
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