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A 150V novel high-voltage LDMOS in a 0.18um BCD plug-in process | IEEE Conference Publication | IEEE Xplore
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A 150V novel high-voltage LDMOS in a 0.18um BCD plug-in process

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Yen-Ming Chen; Chiu-Ling Lee; Min-Hsuan Tsai; Chiu-Te Lee; Chih-Chong Wang
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Abstract:

The feature of this BCD180 process is flexible to plug-in varied high voltage devices based on fundamental 1.8V/5V BCD process, and we present the plug-in LDMOS reach to ...Show More

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Abstract:

The feature of this BCD180 process is flexible to plug-in varied high voltage devices based on fundamental 1.8V/5V BCD process, and we present the plug-in LDMOS reach to 150V operation voltage in this paper.
Published in: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Date of Conference: 13-17 May 2018
Date Added to IEEE Xplore: 25 June 2018
ISBN Information:
Electronic ISSN: 1946-0201
DOI: 10.1109/ISPSD.2018.8393670
Conference Location: Chicago, IL, USA
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