Abstract:
The effect of hydrogen on defects in AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated by using low-frequency noise (LFN) method. The results show tha...Show MoreMetadata
Abstract:
The effect of hydrogen on defects in AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated by using low-frequency noise (LFN) method. The results show that drain-to-source current of AlGaN/GaN HEMTs after hydrogen treatment is significantly larger than that of the fresh AlGaN/GaN HEMTs. The maximum variation of drain-to-source current is up to 80 mA at the gate-to-source voltage of 0 V and drain-to-source voltage of 5 V. The suppression of current collapse was also observed, and the gate-lag characteristic becomes better for the AlGaN/GaN HEMTs after hydrogen treatment. Extracted by the LFN method, the trap density decreases by about one order of magnitude in the AlGaN/GaN HEMTs after hydrogen treatment, and this would lead to less depleted electrons in the channel 2-D electron gas. The mechanism for the reduction of trap density could be attributed to H-passivated defects at AlGaN surface, AlGaN barrier layer, and heterostructure interface. The results of this paper may be useful in the design and application of AlGaN/GaN HEMTs.
Published in: IEEE Transactions on Electron Devices ( Volume: 65, Issue: 4, April 2018)
Funding Agency:
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China
Y. Q. Chen was born in Hunan, China, in 1982. He received the B.S. degree in microelectronics and the Ph.D. degree in materials science and engineering from Xiangtan University, Xiangtan, China, in 2006 and 2011, respectively.
Since 2011, he has been a Senior Engineer with the Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, The No.5 Electronics Research Institute of the Min...Show More
Y. Q. Chen was born in Hunan, China, in 1982. He received the B.S. degree in microelectronics and the Ph.D. degree in materials science and engineering from Xiangtan University, Xiangtan, China, in 2006 and 2011, respectively.
Since 2011, he has been a Senior Engineer with the Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, The No.5 Electronics Research Institute of the Min...View more
School of Microelectronics, Xidian University, Xi’an, China
Y. C. Zhang was born in Guangzhou, China, in 1995. He is currently pursuing the M.S. degree in microelectronics with Xidian University, Xi’an, China.
In 2017, he joined the Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China, as a Graduate Trainee.
Y. C. Zhang was born in Guangzhou, China, in 1995. He is currently pursuing the M.S. degree in microelectronics with Xidian University, Xi’an, China.
In 2017, he joined the Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China, as a Graduate Trainee.View more
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China
Y. Liu received the B.S. and Ph.D. degrees in electrical engineering from the South China University of Technology, Guangzhou, China, in 2004 and 2009, respectively.
Since 2011, he has been a Senior Engineer with the Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou.
Y. Liu received the B.S. and Ph.D. degrees in electrical engineering from the South China University of Technology, Guangzhou, China, in 2004 and 2009, respectively.
Since 2011, he has been a Senior Engineer with the Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou.View more
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China
X. Y. Liao received the B.S. and M.S. degrees in microelectronics from Xidian University, Xi’an, China, in 2010 and 2013, respectively.
In 2013, she joined the Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China. Her current research interests include GaN-based high-ele...Show More
X. Y. Liao received the B.S. and M.S. degrees in microelectronics from Xidian University, Xi’an, China, in 2010 and 2013, respectively.
In 2013, she joined the Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China. Her current research interests include GaN-based high-ele...View more
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China
Y. F. En received the B.S. degree in semiconductor physics and solid-state electronics, the M.S. degree in semiconductor devices and microelectronics, and the Ph.D. degree from Xidian University, Xi’an, China, in 1990, 1995, and 2013, respectively.
Since 1995, she has been with the No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China.
Y. F. En received the B.S. degree in semiconductor physics and solid-state electronics, the M.S. degree in semiconductor devices and microelectronics, and the Ph.D. degree from Xidian University, Xi’an, China, in 1990, 1995, and 2013, respectively.
Since 1995, she has been with the No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China.View more
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China
W. X. Fang received the B.S., M.S., and Ph.D. degrees in condensed-matter physics from Sun Yet-sen University, Guangzhou, China, in 2002, 2005, and 2008, respectively.
He was a Visiting Scholar with The Hong Kong University of Science and Technology, Hong Kong, in 2009. He joined the No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou, China.
W. X. Fang received the B.S., M.S., and Ph.D. degrees in condensed-matter physics from Sun Yet-sen University, Guangzhou, China, in 2002, 2005, and 2008, respectively.
He was a Visiting Scholar with The Hong Kong University of Science and Technology, Hong Kong, in 2009. He joined the No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou, China.View more
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China
Y. Huang received the M.S. degree in microelectronic technology from the University of Electronic Science and Technology of China, Chengdu, China, in 1998.
Since 1998, he has been a Research Engineer and a Professor with the Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou, ...Show More
Y. Huang received the M.S. degree in microelectronic technology from the University of Electronic Science and Technology of China, Chengdu, China, in 1998.
Since 1998, he has been a Research Engineer and a Professor with the Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou, ...View more
Contents Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China
Y. Q. Chen was born in Hunan, China, in 1982. He received the B.S. degree in microelectronics and the Ph.D. degree in materials science and engineering from Xiangtan University, Xiangtan, China, in 2006 and 2011, respectively.
Since 2011, he has been a Senior Engineer with the Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China.
Y. Q. Chen was born in Hunan, China, in 1982. He received the B.S. degree in microelectronics and the Ph.D. degree in materials science and engineering from Xiangtan University, Xiangtan, China, in 2006 and 2011, respectively.
Since 2011, he has been a Senior Engineer with the Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China.View more
School of Microelectronics, Xidian University, Xi’an, China
Y. C. Zhang was born in Guangzhou, China, in 1995. He is currently pursuing the M.S. degree in microelectronics with Xidian University, Xi’an, China.
In 2017, he joined the Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China, as a Graduate Trainee.
Y. C. Zhang was born in Guangzhou, China, in 1995. He is currently pursuing the M.S. degree in microelectronics with Xidian University, Xi’an, China.
In 2017, he joined the Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China, as a Graduate Trainee.View more
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China
Y. Liu received the B.S. and Ph.D. degrees in electrical engineering from the South China University of Technology, Guangzhou, China, in 2004 and 2009, respectively.
Since 2011, he has been a Senior Engineer with the Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou.
Y. Liu received the B.S. and Ph.D. degrees in electrical engineering from the South China University of Technology, Guangzhou, China, in 2004 and 2009, respectively.
Since 2011, he has been a Senior Engineer with the Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou.View more
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China
X. Y. Liao received the B.S. and M.S. degrees in microelectronics from Xidian University, Xi’an, China, in 2010 and 2013, respectively.
In 2013, she joined the Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China. Her current research interests include GaN-based high-electron-mobility transistors’ reliability mechanism.
X. Y. Liao received the B.S. and M.S. degrees in microelectronics from Xidian University, Xi’an, China, in 2010 and 2013, respectively.
In 2013, she joined the Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China. Her current research interests include GaN-based high-electron-mobility transistors’ reliability mechanism.View more
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China
Y. F. En received the B.S. degree in semiconductor physics and solid-state electronics, the M.S. degree in semiconductor devices and microelectronics, and the Ph.D. degree from Xidian University, Xi’an, China, in 1990, 1995, and 2013, respectively.
Since 1995, she has been with the No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China.
Y. F. En received the B.S. degree in semiconductor physics and solid-state electronics, the M.S. degree in semiconductor devices and microelectronics, and the Ph.D. degree from Xidian University, Xi’an, China, in 1990, 1995, and 2013, respectively.
Since 1995, she has been with the No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China.View more
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China
W. X. Fang received the B.S., M.S., and Ph.D. degrees in condensed-matter physics from Sun Yet-sen University, Guangzhou, China, in 2002, 2005, and 2008, respectively.
He was a Visiting Scholar with The Hong Kong University of Science and Technology, Hong Kong, in 2009. He joined the No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou, China.
W. X. Fang received the B.S., M.S., and Ph.D. degrees in condensed-matter physics from Sun Yet-sen University, Guangzhou, China, in 2002, 2005, and 2008, respectively.
He was a Visiting Scholar with The Hong Kong University of Science and Technology, Hong Kong, in 2009. He joined the No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou, China.View more
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China
Y. Huang received the M.S. degree in microelectronic technology from the University of Electronic Science and Technology of China, Chengdu, China, in 1998.
Since 1998, he has been a Research Engineer and a Professor with the Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou, China.
Y. Huang received the M.S. degree in microelectronic technology from the University of Electronic Science and Technology of China, Chengdu, China, in 1998.
Since 1998, he has been a Research Engineer and a Professor with the Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou, China.View more
