Abstract:
We present the first mature SPAD device in advanced 40 nm technology. For the first time we also show dedicated microlens fabrication on top of SPADs integrated in the sa...Show MoreMetadata
Abstract:
We present the first mature SPAD device in advanced 40 nm technology. For the first time we also show dedicated microlens fabrication on top of SPADs integrated in the same technology node. A high fill factor >70% is reported together with a low DCR median of 50cps at room temperature and a high PDP of 5% at 840nm. By taking advantage of the small digital node, a larger amount of logic can be integrated inside the pixel, which is ready to be ported to a 3D stacked technology, where the logic is implemented in a fully digital dedicated layer [1].
Published in: 2017 IEEE International Electron Devices Meeting (IEDM)
Date of Conference: 02-06 December 2017
Date Added to IEEE Xplore: 25 January 2018
ISBN Information:
Electronic ISSN: 2156-017X