Abstract:
The thickness of amorphous layer formed by high dose ion implantation was measured by spectroscopic ellipsometry. The amorphous layer thickness, derived through a harmoni...Show MoreMetadata
Abstract:
The thickness of amorphous layer formed by high dose ion implantation was measured by spectroscopic ellipsometry. The amorphous layer thickness, derived through a harmonic oscillator model using the spectroscopic ellipsometry data, is in good agreement with results by cross-sectional TEM and results for Monte-Carlo simulation of implant damage. Cross-wafer uniformity was also obtained for the thickness.
Published in: 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144)
Date of Conference: 22-26 June 1998
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-4538-X
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
