Abstract:
This study reports the design and experimental results of a fully-passive solid-state RF switch based on the Conductive Bridging Memory Technology, popularly known as CBR...Show MoreMetadata
Abstract:
This study reports the design and experimental results of a fully-passive solid-state RF switch based on the Conductive Bridging Memory Technology, popularly known as CBRAM. The developed device is a shunt mode RF switch based on a Metal-Insulator-Metal (MIM) structure with Copper - Nafion - Aluminum switching layers on a Coplanar Waveguide (CPW) transmission line, operational in the DC to 3GHz range. DC pulses in the range +12V to -20 V are used to operate the switch. The design is initially simulated using the FEM based CST microwave Studio and then realized and validated on a low cost FR4 substrate, and without using any sophisticated clean room technology.
Published in: 2017 XXXIInd General Assembly and Scientific Symposium of the International Union of Radio Science (URSI GASS)
Date of Conference: 19-26 August 2017
Date Added to IEEE Xplore: 13 November 2017
ISBN Information:
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