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Sidewall roughness in Si3N4 waveguides directly measured by atomic force microscopy | IEEE Conference Publication | IEEE Xplore

Sidewall roughness in Si3N4 waveguides directly measured by atomic force microscopy


Abstract:

We have developed a robust method to measure side-wall-roughness of sub-micron feature waveguides using atomic-force-microscopy. We measure the side-wall-roughness of sil...Show More

Abstract:

We have developed a robust method to measure side-wall-roughness of sub-micron feature waveguides using atomic-force-microscopy. We measure the side-wall-roughness of silicon-nitride waveguides patterned by DUV photolithography and compare results of two different etch chemistries.
Date of Conference: 14-19 May 2017
Date Added to IEEE Xplore: 26 October 2017
ISBN Information:
Conference Location: San Jose, CA, USA

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