Abstract:
We present the Ge Zener-Emitter injection mechanism for synthesis of an indirect semiconductor optical amplifier (ISOA), featuring gain characteristics and electro-absorp...Show MoreMetadata
Abstract:
We present the Ge Zener-Emitter injection mechanism for synthesis of an indirect semiconductor optical amplifier (ISOA), featuring gain characteristics and electro-absorption modulation with extinction ratios > 14 dB by sufficient Moss-Burstein shift, for generic Ge-on-Si Photonics platform.
Date of Conference: 23-25 August 2017
Date Added to IEEE Xplore: 26 October 2017
ISBN Information:
Electronic ISSN: 1949-209X