Abstract:
A novel series-stacked large swing push-pull MOS-HBT driver was implemented in 55nm SiGe BiCMOS technology. The circuit achieves 4.8Vpp differential swing, 57.5GHz band-w...Show MoreMetadata
Abstract:
A novel series-stacked large swing push-pull MOS-HBT driver was implemented in 55nm SiGe BiCMOS technology. The circuit achieves 4.8Vpp differential swing, 57.5GHz band-width and has an output compression point of 12 dBm per side. 4-PAM and 8-PAM eye diagrams were measured at 56 GBaud for a record data rate of 168 Gb/s. 4-PAM 64GBaud eye diagrams were also demonstrated. The circuit consumes 820/600 mW with/without the predriver, for an energy efficiency of 4.88/3.57 pJ/b.
Published in: 2017 IEEE MTT-S International Microwave Symposium (IMS)
Date of Conference: 04-09 June 2017
Date Added to IEEE Xplore: 05 October 2017
ISBN Information:
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