Abstract:
This paper presents highlights and major achievements in research and development of GaAs technology in Georgia in three main directions: MESFETs, HEMTs and digital ICs; ...Show MoreMetadata
Abstract:
This paper presents highlights and major achievements in research and development of GaAs technology in Georgia in three main directions: MESFETs, HEMTs and digital ICs; low-temperature stimulated processes; monolithic LED arrays for OEICs. The potential roadmaps of these technologies are also discussed.
Published in: GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369)
Date of Conference: 17-20 October 1999
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-5585-7
Print ISSN: 1064-7775
