Abstract:
The shallow junction is used in the PDSOI technology. Unfortunately, the standard diode model maybe not suit to this PN junction. A simulation model is proposed based on ...Show MoreMetadata
Abstract:
The shallow junction is used in the PDSOI technology. Unfortunately, the standard diode model maybe not suit to this PN junction. A simulation model is proposed based on the PDSOI process. The additional influence of the voltage bias of the junction to the capacitance is considered in this model and then the model is well verified by the measured data.
Published in: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
Date of Conference: 25-28 October 2016
Date Added to IEEE Xplore: 03 August 2017
ISBN Information:
Contents 