Study of the inverter circuit with DNA/Si-MOSFET

An input/output characteristics of the inverter composed of the DNA/Si-MOSFET and the parasitic capacity was studied. The DNA was bridged between the Si electrodes those serve as the source and drain with the 120nm-gap-length. At V
_DD
=0V and V
_DD
=3V, the output characteristic was almost the same. The reason of this phenomenon is that the space charge layer of the DNA/Si-MOSFET changes due to the charge capture or emission and the parasitic capacitance changes synchronized with the gate voltage.