Abstract:
The physical influence of temperature down to the cryogenic regime is analyzed in a comprehensive study and the comparison of IV and III-V Schottky barrier (SB) double-ga...Show MoreMetadata
Abstract:
The physical influence of temperature down to the cryogenic regime is analyzed in a comprehensive study and the comparison of IV and III-V Schottky barrier (SB) double-gate MOSFETs. The exploration is done using the Synopsys TCAD Sentaurus device simulator and first benchmarked with experimental data. The important device physics of both SB-MOSFETs and conventional MOSFETs are reviewed. The impact of temperature on device performance down to the liquid-nitrogen regime is then explored. We find reduced drive currents in SB-MOSFETs fabricated on small effective mass materials and that SB lowering can significantly improve SB-MOSFETs, especially at low temperatures.
Published in: IEEE Transactions on Electron Devices ( Volume: 64, Issue: 9, September 2017)
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Schottky Barrier ,
- Device Performance ,
- Small Mass ,
- Impact Of Temperature ,
- Synopsys ,
- Small Effective Mass ,
- Temperature Dependence ,
- Conduction Band ,
- Net Effect ,
- Important Impact ,
- Fermi Level ,
- Low Barrier ,
- Device Structure ,
- Quantum Effects ,
- Current Devices ,
- Fermi Dirac ,
- Real Devices ,
- Band Bending ,
- Exponential Dependence ,
- Gallium Arsenide ,
- Tunneling Current ,
- TCAD Simulation ,
- Partially Ionized ,
- Mass Of Carriers ,
- Thermionic Emission
- Author Keywords
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Schottky Barrier ,
- Device Performance ,
- Small Mass ,
- Impact Of Temperature ,
- Synopsys ,
- Small Effective Mass ,
- Temperature Dependence ,
- Conduction Band ,
- Net Effect ,
- Important Impact ,
- Fermi Level ,
- Low Barrier ,
- Device Structure ,
- Quantum Effects ,
- Current Devices ,
- Fermi Dirac ,
- Real Devices ,
- Band Bending ,
- Exponential Dependence ,
- Gallium Arsenide ,
- Tunneling Current ,
- TCAD Simulation ,
- Partially Ionized ,
- Mass Of Carriers ,
- Thermionic Emission
- Author Keywords