Abstract:
This paper presents the “Hole Path Concept” in trench gate IGBTs in order to have extended performance in faster switching with balance low switching loss and low Electro...Show MoreMetadata
Abstract:
This paper presents the “Hole Path Concept” in trench gate IGBTs in order to have extended performance in faster switching with balance low switching loss and low ElectroMagnetic Interference (EMI) noise. The hole path IGBT which is utilized narrow hole extraction regions in floating p-region can realize a better turn-on di/dt controllability with high IE effect.
Date of Conference: 28 May 2017 - 01 June 2017
Date Added to IEEE Xplore: 24 July 2017
ISBN Information:
Electronic ISSN: 1946-0201
Contents 