Abstract:
We present a stacked-FET monolithic millimeter-wave (mmW) integrated circuit Doherty power amplifier (DPA). The DPA employs a novel asymmetrical stack gate bias to achiev...Show MoreMetadata
Abstract:
We present a stacked-FET monolithic millimeter-wave (mmW) integrated circuit Doherty power amplifier (DPA). The DPA employs a novel asymmetrical stack gate bias to achieve high power and high efficiency at 6-dB power back-off (PBO). The circuit is fabricated in a 0.15-μm enhancement mode (E-mode) Gallium Arsenide (GaAs) process. Experimental results demonstrate output power at 1-dB gain compression (P1dB) of 28.2 dBm, peak power added efficiency (PAE) of 37% and PAE at 6-dB PBO of 27% at 28 GHz. Measured small signal gain is 15 dB while the 3-dB bandwidth covers from 25.5 to 29.5 GHz. Using digital predistortion (DPD) with a 20 MHz 64 QAM modulated signal, an adjacent channel power ratio (ACPR) of -46 dBc has been observed.
Date of Conference: 04-06 June 2017
Date Added to IEEE Xplore: 07 July 2017
ISBN Information:
Electronic ISSN: 2375-0995
Department of Electrical and Computer Engineering, University of California, Davis, CA, USA
Department of Electrical and Computer Engineering, University of California, Davis, CA, USA
Department of Electrical and Computer Engineering, University of California, Davis, CA, USA
Contents Department of Electrical and Computer Engineering, University of California, Davis, CA, USA
Department of Electrical and Computer Engineering, University of California, Davis, CA, USA
Department of Electrical and Computer Engineering, University of California, Davis, CA, USA
