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Generation of Pulsed Laser Radiation at 1002 nm with a Quantum Defect of 2.6% | IEEE Journals & Magazine | IEEE Xplore

Generation of Pulsed Laser Radiation at 1002 nm with a Quantum Defect of 2.6%


Impact Statement:Pulsed laser radiation at 1002 nm was generated at repetition rate of 3.7 kHz, with pulse energy of 0.23 mJ and duration of 5.5 ns, from a miniature Yb:LuPO4 crystal rod ...Show More

Abstract:

Low-quantum-defect pulsed oscillation at 1002 nm was achieved with a Yb:LuPO4 miniature crystal rod laser longitudinally pumped by a 976-nm diode laser, with a GaAs semic...Show More
Impact Statement:
Pulsed laser radiation at 1002 nm was generated at repetition rate of 3.7 kHz, with pulse energy of 0.23 mJ and duration of 5.5 ns, from a miniature Yb:LuPO4 crystal rod laser passively Q-switched by a GaAs semiconductor saturable absorber, with a quantum defect of 2.6%, the lowest among Q-switched Yb lasers pumped by 976-nm diode.

Abstract:

Low-quantum-defect pulsed oscillation at 1002 nm was achieved with a Yb:LuPO4 miniature crystal rod laser longitudinally pumped by a 976-nm diode laser, with a GaAs semiconductor saturable absorber to induce passive Q-switching. With 17.2 W of pump power absorbed in the crystal rod, an average output power of 0.85 W was generated at a repetition rate of 3.7 kHz, the resulting pulse energy, duration, and peak power were 230 μJ, 5.5 ns, and 41.8 kW, respectively.
Published in: IEEE Photonics Journal ( Volume: 9, Issue: 3, June 2017)
Article Sequence Number: 1503208
Date of Publication: 12 May 2017

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