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Enhanced Responsivity of GaN Metal–Semiconductor–Metal (MSM) Photodetectors on GaN Substrate | IEEE Journals & Magazine | IEEE Xplore

Enhanced Responsivity of GaN Metal–Semiconductor–Metal (MSM) Photodetectors on GaN Substrate

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Impact Statement:High spectra response of MSM ultraviolet (UV) photodetectors (PDs) based on GaN substrate with different diameters of Al nanodots on the surface were realized. The UV PDs...Show More

Abstract:

High spectra response of metal-semiconductor-metal (MSM) ultraviolet photodetectors (UV PDs) based on GaN epitaxial wafers with different diameters of Al nanodots on the ...Show More
Impact Statement:
High spectra response of MSM ultraviolet (UV) photodetectors (PDs) based on GaN substrate with different diameters of Al nanodots on the surface were realized. The UV PDs exhibit low dark current and high spectral response. The peak responsivities for the PDs with Al nanodots show significant enhancement compared to the referential PD without Al nanodots. Numerical investigations reveal that the significant enhancement performance is due to the localized surface plasmon effect.

Abstract:

High spectra response of metal-semiconductor-metal (MSM) ultraviolet photodetectors (UV PDs) based on GaN epitaxial wafers with different diameters of Al nanodots on the surface were realized on free-standing GaN substrates. The UV PDs exhibit low dark current and high spectral response both at room temperature and 150 °C, demonstrating the thermal stability of the fabricated devices. The peak responsivities for the PDs with Al nanodot diameters of 60, 80, and 120 nm are 1.079, 2.420, and 3.096 A/W, showing an enhancement ratio of 32%, 196%, and 280%, respectively, compared to the referential PD without Al nanodots. Numerical investigations reveal that the significant enhancement performance is due to the localized surface plasmon effect, which enhances the localized electric field and produces more electron-hole pairs in the optoelectronic devices, leading to a higher responsivity. The results presented in this paper can promote the development and application for high performance GaN UV PDs.
Published in: IEEE Photonics Journal ( Volume: 9, Issue: 2, April 2017)
Article Sequence Number: 6801707
Date of Publication: 29 March 2017

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