Conferences >2016 IEEE International Elect...

Self-heating in FinFET and GAA-NW using Si, Ge and III/V channels

Download PDF
Download References
Request Permissions
Save to
Alerts

Abstract:

The self-heating (SH) effect is studied experimentally and through simulations on an extensive set of industry-relevant solutions for FF and GAA-NW Si and high-mobility d...Show More

Metadata

Abstract:

The self-heating (SH) effect is studied experimentally and through simulations on an extensive set of industry-relevant solutions for FF and GAA-NW Si and high-mobility devices, with multiple processing options. Considerations for managing SH in future technologies are provided.

Published in: 2016 IEEE International Electron Devices Meeting (IEDM)

Date of Conference: 03-07 December 2016

Date Added to IEEE Xplore: 02 February 2017

ISBN Information:

Electronic ISSN: 2156-017X

DOI: 10.1109/IEDM.2016.7838425

Conference Location: San Francisco, CA, USA

E. Bury

Imec, Leuven, Belgium

Also with KU Leuven, ESAT-MICAS, Heverlee, Belgium

B. Kaczer

Imec, Leuven, Belgium