Abstract:
A novel approach to technology integration of system-on-chip RF Front-End Module (FEM) is presented. Device design to achieve best-in-class extended drain power mosfet (E...Show MoreMetadata
Abstract:
A novel approach to technology integration of system-on-chip RF Front-End Module (FEM) is presented. Device design to achieve best-in-class extended drain power mosfet (EDNMOS) with Ron of 1.6Ohm-mm and fT >39GHz is discussed. This is followed by an analysis of a high performance switch device integrated via selective silicon thinning.
Published in: 2016 IEEE International Electron Devices Meeting (IEDM)
Date of Conference: 03-07 December 2016
Date Added to IEEE Xplore: 02 February 2017
ISBN Information:
Electronic ISSN: 2156-017X
Contents 