A 300mm foundry HRSOI technology with variable silicon thickness for integrated FEM applications

A novel approach to technology integration of system-on-chip RF Front-End Module (FEM) is presented. Device design to achieve best-in-class extended drain power mosfet (EDNMOS) with Ron of 1.6Ohm-mm and f
_T
>39GHz is discussed. This is followed by an analysis of a high performance switch device integrated via selective silicon thinning.